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MPS3638A Datasheet, PDF (1/8 Pages) Motorola, Inc – Switching Transistor | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS3638A/D
Switching Transistor
PNP Silicon
COLLECTOR
3
2
BASE
MPS3638A
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector â Emitter Voltage
Collector â Emitter Voltage
Collector â Base Voltage
Emitter â Base Voltage
Collector Current â Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCES
VCBO
VEBO
IC
PD
â25
â25
â25
â4.0
â500
625
5.0
Vdc
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watts
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
â 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
RqJA(1)
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Unit
°C/W
°C/W
Symbol
OFF CHARACTERISTICS
Collector â Emitter Breakdown Voltage
(IC = â100 mAdc, VBE = 0)
Collector â Emitter Sustaining Voltage(2)
(IC = â10 mAdc, IB = 0)
Collector â Base Breakdown Voltage
(IC = â100 mAdc, IE = 0)
Emitter â Base Breakdown Voltage
(IE = â100 mAdc, IC = 0)
Collector Cutoff Current
(VCE = â15 Vdc, VBE = 0)
(VCE = â15 Vdc, VBE = 0, TA = â65°C)
Emitter Cutoff Current
(VEB = â3.0 V, IC = 0)
Base Current
(VCE = â15 Vdc, VBE = 0)
V(BR)CES
VCEO(sus)
V(BR)CBO
V(BR)EBO
ICES
IEBO
IB
v v 1. RqJA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
1
23
CASE 29â04, STYLE 1
TOâ92 (TOâ226AA)
Min
Max
Unit
â25
â
Vdc
â25
â
Vdc
â25
â
Vdc
â4.0
â
Vdc
mAdc
â
â0.035
â
â2.0
â
â35
nA
â
â0.035
mAdc
(Replaces MPS3638/D)
©MMotootorroollaa,
SmallâSignal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1
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