MPS2369 Datasheet, PDF (1/4 Pages) Motorola, Inc – Switching Transistors

ON Semiconductort
Switching Transistors
NPN Silicon
MPS2369
MPS2369A*
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCES
VCBO
VEBO
IC
PD
TJ, Tstg
Value
15
40
40
4.5
200
625
5.0
–55 to +150
Symbol
Max
R_qJA
200
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
Unit
°C/W
*ON Semiconductor Preferred Device
1
2
3
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
COLLECTOR
3
2
BASE
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
15
MPS2369A
Collector–Emitter Breakdown Voltage
(IC = 10 µAdc, VBE = 0)
V(BR)CES
40
MPS2369,A
Collector–Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
40
MPS2369,A
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
4.5
MPS2369,A
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 125°C)
ICBO
—
MPS2369,A
—
Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0)
ICES
—
MPS2369,A
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
1
EMITTER
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
—
Vdc
µAdc
—
0.4
—
30
—
0.4
µAdc
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
June, 2001 – Rev. 2
Publication Order Number:
MPS2369/D