MPN3404 Datasheet, PDF (1/4 Pages) ON Semiconductor – SILICON PIN SWITCHING DIODE

ON Semiconductort
Silicon Pin Diode
This device is designed primarily for VHF band switching
applications but is also suitable for use in general–purpose switching
circuits. It is supplied in a cost–effective TO–92 type plastic package
for economical, high–volume consumer and industrial requirements.
• Rugged PIN Structure Coupled with Wirebond
Construction for Optimum Reliability
• Low Series Resistance @ 100 MHz 
1
Anode
RS = 0.7 Ohms (Typ) @ IF = 10 mAdc
• Sturdy TO–92 Style Package for Handling Ease
2
Cathode
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Power Dissipation @ TA = 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
Symbol
VR
PD
TJ
Tstg
Value
20
400
4.0
+125
–55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Breakdown Voltage
(IR = 10 µAdc)
Diode Capacitance
(VR = 15 Vdc, f = 1.0 MHz)
V(BR)R
CT
Series Resistance (Figure 5)
RS
(IF = 10 mAdc)
Reverse Leakage Current
IR
(VR = 15 Vdc)
Unit
Vdc
mW
mW/°C
°C
°C
Min
20
—
—
—
MPN3404
SILICON PIN
SWITCHING DIODE
1
2
CASE 182–06, STYLE 1
TO–92 (TO–226AC)
Typ
Max
Unit
—
—
Vdc
1.3
2.0
pF
0.7
0.85
Ω
—
0.1
µAdc
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 2
Publication Order Number:
MPN3404/D