MPF930 Datasheet, PDF (1/4 Pages) Motorola, Inc – TMOS Switching

MPF930
TMOS Switching
N−Channel — Enhancement
MAXIMUM RATINGS
Rating
Symbol MPF930 MPF960 MPF990 Unit
Drain −Source Voltage
V_DS
35
60
90
Vdc
Drain −Gate Voltage
V_DG
35
60
90
Vdc
Gate−Source Voltage
— Continuous
V_GS
± 20
Vdc
— Non−repetitive
V_GSM
± 40
Vpk
(t_p ≤ 50 μs)
Drain Current
Continuous⁽¹⁾
I_D
Pulsed⁽²⁾
I_DM
Adc
2.0
3.0
Total Device Dissipation
P_D
@ T_A = 25°C
Derate above 25°C
1.0
W
8.0
mW/°C
http://onsemi.com
CASE 29−05, STYLE 22
TO−92 (TO−226AE)
1
23
3 DRAIN
Operating and Storage T_J, T_stg
−55 to 150
°C
Junction
Temperature Range
2
GATE
Thermal Resistance
θ_JA
125
°C/W
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
1 SOURCE
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(V_GS = 0, I_D = 10 μAdc)
MPF930
MPF960
MPF990
V_(BR)DSX
Vdc
35
—
—
60
—
—
90
—
—
Gate Reverse Current (V_GS = 15 Vdc, V_DS = 0)
ON CHARACTERISTICS⁽²⁾
Zero−Gate−Voltage Drain Current
(V_DS = Maximum Rating, V_GS = 0)
Gate Threshold Voltage
(I_D = 1.0 mAdc, V_DS = V_GS)
Drain−Source On−Voltage (V_GS = 10 Vdc)
(I_D = 0.5 Adc)
(I_D = 1.0 Adc)
(I_D = 2.0 Adc)
MPF930
MPF960
MPF990
MPF930
MPF960
MPF990
MPF930
MPF960
MPF990
I_GSS
—
—
50
nAdc
I_DSS
—
—
10
μAdc
V_GS(Th)
1.0
—
3.5
Vdc
V_DS(on)
—
—
—
—
—
—
—
—
—
Vdc
0.4
0.7
0.6
0.8
0.6
1.2
0.9
1.4
1.2
1.7
1.2
2.4
2.2
3.0
2.8
3.5
2.8
4.8
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 4
Publication Order Number:
MPF930/D