MPF102 Datasheet, PDF (1/8 Pages) Motorola, Inc – JFET VHF Amplifier

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
JFET VHF Amplifier
N–Channel — Depletion
1 DRAIN
Order this document
by MPF102/D
MPF102
3
GATE
MAXIMUM RATINGS
2 SOURCE
Rating
Symbol
Value
Unit
Drain – Source Voltage
Drain – Gate Voltage
Gate – Source Voltage
Gate Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VDS
VDG
VGS
IG
PD
25
Vdc
25
Vdc
– 25
Vdc
10
mAdc
350
mW
2.8
mW/°C
Junction Temperature Range
TJ
125
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Gate – Source Breakdown Voltage
(IG = –10 µAdc, VDS = 0)
V(BR)GSS
Gate Reverse Current
(VGS = –15 Vdc, VDS = 0)
(VGS = –15 Vdc, VDS = 0, TA = 100°C)
Gate – Source Cutoff Voltage
(VDS = 15 Vdc, ID = 2.0 nAdc)
Gate – Source Voltage
(VDS = 15 Vdc, ID = 0.2 mAdc)
IGSS
VGS(off)
VGS
ON CHARACTERISTICS
Zero – Gate –Voltage Drain Current(1)
(VDS = 15 Vdc, VGS = 0 Vdc)
IDSS
SMALL– SIGNAL CHARACTERISTICS
Forward Transfer Admittance(1)
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)
Input Admittance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)
yfs
Re(yis)
Output Conductance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)
Re(yos)
Input Capacitance
Ciss
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
v v 1. Pulse Test; Pulse Width 630 ms, Duty Cycle 10%.
Crss
1
2
3
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
Min
Max
Unit
– 25
—
Vdc
—
–2.0
nAdc
—
– 2.0
µAdc
—
– 8.0
Vdc
–0.5
–7.5
Vdc
2.0
20
mAdc
2000
1600
—
—
—
—
7500
—
800
200
7.0
3.0
mmhos
mmhos
mmhos
pF
pF
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1