MMT10B350T3 Datasheet, PDF (1/5 Pages) ON Semiconductor – Thyristor Surge Protectors High Voltage Bidirectional TSPD

MMT10B350T3
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover−triggered crowbar
protectors. Turn−off occurs when the surge current falls below the
holding current value.
Secondary protection applications for electronic telecom equipment
at customer premises.
Features
• High Surge Current Capability: 100 Amps 10 x 1000 msec, for
Controlled Temperature Environments
• The MMT10B350T3 Series is used to help equipment meet various
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,
IEC 950, UL 1459 & 1950 and FCC Part 68.
• Bidirectional Protection in a Single Device
• Little Change of Voltage Limit with Transient Amplitude or Rate
• Freedom from Wearout Mechanisms Present in Non−Semiconductor
Devices
• Fail−Safe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
• Surface Mount Technology (SMT)
• Indicates UL Recognized − File #E210057
• Pb−Free Package is Available
http://onsemi.com
BIDIRECTIONAL TSPD ^{( )}
100 AMP SURGE, 350 VOLTS
MT1
MT2
SMB
(No Polarity)
(Essentially JEDEC DO−214AA)
CASE 403C
MARKING DIAGRAM
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Off−State Voltage − Maximum
V_DM
300
V
Maximum Pulse Surge Short Circuit Current
Non−Repetitive
Double Exponential Decay Waveform
(Notes 1 and 2)
10 x 1000 msec
−25°C Initial Temperature
2 x 10 msec
10 x 160 msec
10 x 700 msec
I_PPS1
I_PPS2
I_PPS3
I_PPS4
A(pk)
"100
"500
"200
"180
Maximum Non−Repetitive Rate of Change of
On−State Current Double Exponential Waveform,
R = 2.4 W, L = 2.0 mH, C = 2.0 mF, I_pk = 110 A
di/dt "100 A/ms
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
AYWW
RPDM G
G
A
= Assembly Location
Y
= Year
WW = Work Week
RPDM = Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
MMT10B350T3
SMB 2500/Tape & Reel
MMT10B350T3G SMB 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
January, 2006 − Rev. 2
Publication Order Number:
MMT10B350T3/D