MMSF7P03HD Datasheet, PDF (1/8 Pages) Motorola, Inc – SINGLE TMOS POWER MOSFET 30 VOLTS

MMSF7P03HD
Preferred Device
Power MOSFET
7 A, 30 V, P−Channel SO−8
These miniature surface mount devices are designed for use in low
voltage, high speed switching applications where power efficiency is
important. Typical applications are DC−DC converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives.
Features
• Low R_DS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I_DSS Specified at Elevated Temperature
• Mounting Information for SO−8 Package Provided
• Pb−Free Package is Available
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
V_DSS
30
Vdc
Gate−to−Source Voltage
Continuous V_GS
± 20
Vdc
Drain Current Continuous @ T_A = 25°C
I_D
Single Pulse (t_p ≤ 10 ms) I_DM
7.0
Adc
50
Apk
Source Current − Continuous @ T_A = 25°C
I_S
2.3
Adc
Total Power Dissipation @ T_A = 25°C
(Note 1)
P_D
2.5
W
Operating and Storage Temperature Range T_J, T_stg − 55 to 150 °C
Single Pulse Drain−to−Source Avalanche
E_AS
Energy − Starting T_J = 25°C
(V_DD = 30 Vdc, V_GS = 5.0 Vdc,
V_DS = 32 Vdc, I_L = 10 Apk,
L = 10 mH, R_G = 25 W)
500
mJ
Thermal Resistance, Junction−to−Ambient R_qJA
50
°C/W
Maximum Temperature for Soldering
T
260
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When mounted on 1 in square FR−4 or G−10 (V_GS = 10 V @ 10 seconds)
© Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 7
http://onsemi.com
7 A, 30 V − R_DS(on) = 35 mW
D
P−Channel
G
S
MARKING
DIAGRAM
8
1
SO−8
CASE 751
STYLE 12
8
S7P03
AYWWG
G
1
S7P03 = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Source
Source
Source
Gate
18
27
36
45
Top View
Drain
Drain
Drain
Drain
ORDERING INFORMATION
Device
Package Shipping^†
MMSF7P03HDR2
SO−8 2500 / Tape&Reel
MMSF7P03HDR2G SO−8 2500 / Tape&Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MMSF7P03HD/D