MMSF7N03Z Datasheet, PDF (1/11 Pages) Motorola, Inc – SINGLE TMOS POWER MOSFET 7.5 AMPERES 30 VOLTS

MMSF7N03Z
Power MOSFET
7 Amps, 30 Volts
N−Channel SO−8
EZFETst are an advanced series of Power MOSFETs which contain
monolithic back−to−back zener diodes. These zener diodes provide
protection against ESD and unexpected transients. These miniature
surface mount MOSFETs feature ultra low R_DS(on) and true logic level
performance. They are capable of withstanding high energy in the
avalanche and commutation modes and the drain−to−source diode has a
very low reverse recovery time. EZFET devices are designed for use in
low voltage, high speed switching applications where power efficiency is
important. Typical applications are dc−dc converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be used
for low voltage motor controls in mass storage products such as disk
drives and tape drives.
• Zener Protected Gates Provide Electrostatic Discharge Protection
• Ultra Low R_DS(on) Provides Higher Efficiency and Extends Battery
Life
• Designed to withstand 200V Machine Model and 2000V Human
Body Model
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I_DSS Specified at Elevated Temperature
• Mounting Information for SO−8 Package Provided
http://onsemi.com
7 AMPERES
30 VOLTS
R_DS(on) = 30 mW
N−Channel
D
G
S
MARKING
DIAGRAM
SO−8
8
CASE 751
STYLE 12
1
7N03Z
LYWW
7N03Z
L
Y
WW
= Device Code
= Location Code
= Year
= Work Week
PIN ASSIGNMENT
Source
Source
Source
Gate
18
27
36
45
Top View
Drain
Drain
Drain
Drain
ORDERING INFORMATION
Device
Package
Shipping
MMSF7N03ZR2
SO−8 2500 Tape & Reel
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 2
Publication Order Number:
MMSF7N03Z/D