MMSF5P02HD Datasheet, PDF (1/11 Pages) Motorola, Inc – SINGLE TMOS POWER MOSFET 8.7 AMPERES 20 VOLTS

MMSF5P02HD
Preferred Device
Power MOSFET
5 Amps, 20 Volts
P−Channel SO−8
These miniature surface mount MOSFETs feature ultra low R_DS(on)
and true logic level performance. They are capable of withstanding high
energy in the avalanche and commutation modes and the drain−to−source
diode has a very low reverse recovery time. MiniMOSt devices are
designed for use in low voltage, high speed switching applications where
power efficiency is important. Typical applications are dc−dc converters,
and power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be used
for low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
• Ultra Low R_DS(on) Provides Higher Efficiency and Extends Battery
Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I_DSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for SO−8 Package Provided
8
http://onsemi.com
5 AMPERES
20 VOLTS
R_DS(on) = 30 mW
P−Channel
D
G
S
MARKING
DIAGRAM
SO−8
CASE 751
STYLE 13
1
S5P02H
LYWW
L
= Location Code
Y
= Year
WW = Work Week
PIN ASSIGNMENT
N−C
Source
Source
Gate
18
27
36
45
Top View
Drain
Drain
Drain
Drain
ORDERING INFORMATION
Device
Package
Shipping
MMSF5P02HDR2 SO−8 2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 4
Publication Order Number:
MMSF5P02HD/D