MMSF4P01HD Datasheet, PDF (1/12 Pages) Motorola, Inc – SINGLE TMOS POWER FET 4.0 AMPERES 12 VOLTS

MMSF4P01HD
Preferred Device
Power MOSFET
4 Amps, 12 Volts
P−Channel SO−8
These miniature surface mount MOSFETs feature ultra low R_DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a very low reverse recovery time.
MiniMOSt devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc−dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives.
• Ultra Low R_DS(on) Provides Higher Efficiency and Extends Battery
Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I_DSS Specified at Elevated Temperature
• Mounting Information for SO−8 Package Provided
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted) (Note 1.)
Rating
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
12
Vdc
Drain−to−Gate Voltage (R_GS = 1.0 MΩ)
V_DGR
12
Vdc
Gate−to−Source Voltage − Continuous
V_GS
± 8.0 Vdc
Drain Current − Continuous @ T_A = 25°C
I_D
Drain Current − Continuous @ T_A = 100°C
I_D
Drain Current − Single Pulse (t_p ≤ 10 µs)
I_DM
5.1
Adc
3.3
26
Apk
Total Power Dissipation @ T_A = 25°C
(Note 2.)
P_D
2.5 Watts
Operating and Storage Temperature Range
− 55 to 150
°C
Thermal Resistance − Junction to Ambient
(Note 2.)
R_θJA
50 °C/W
Maximum Lead Temperature for Soldering
T_L
Purposes, 1/8″ from case for 10 seconds
260
°C
1. Negative sign for P−Channel device omitted for clarity.
2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided),
10 sec. max.
http://onsemi.com
4 AMPERES
12 VOLTS
R_DS(on) = 80 mW
P−Channel
D
G
S
MARKING
DIAGRAM
SO−8
8
CASE 751
STYLE 13
1
S4P01
LYWW
L
= Location Code
Y
= Year
WW = Work Week
PIN ASSIGNMENT
N−C
Source
Source
Gate
18
27
36
45
Top View
Drain
Drain
Drain
Drain
ORDERING INFORMATION
Device
Package
Shipping
MMSF4P01HDR2 SO−8 2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
September, 2004 − Rev. XXX
Publication Order Number:
MMSF4P01HD/D