MMSF3P02HD Datasheet, PDF (1/8 Pages) Motorola, Inc – SINGLE TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS

MMSF3P02HD
Preferred Device
Power MOSFET
3 Amps, 20 Volts
P−Channel SO−8
These miniature surface mount MOSFETs feature ultra low R_DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a very low reverse recovery time.
MiniMOSt devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc−dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives. The
avalanche energy is specified to eliminate the guesswork in designs
where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
Features
• Ultra Low R_DS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I_DSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for SO−8 Package Provided
• Pb−Free Package is Available
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted) (Note 1)
Rating
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
20
Vdc
Drain−to−Gate Voltage (R_GS = 1.0 MW)
V_DGR
20
Vdc
Gate−to−Source Voltage − Continuous
V_GS
± 20
Vdc
Drain Current − Continuous @ T_A = 25°C
I_D
Drain Current − Continuous @ T_A = 100°C
I_D
Drain Current − Single Pulse (t_p ≤ 10 ms)
I_DM
5.6
Adc
3.6
30
Apk
Total Power Dissipation @ T_A = 25°C (Note 2) P_D
2.5
W
Operating and Storage Temperature Range T_J, T_stg − 55 to 150 °C
Single Pulse Drain−to−Source Avalanche
E_AS
Energy − Starting T_J = 25°C (V_DD = 20 Vdc,
V_GS = 5.0 Vdc, Peak I_L = 9.0 Apk, L = 14
mH, R_G = 25 W)
567
mJ
Thermal Resistance, Junction−to−Ambient
(Note 2)
R_qJA
50
°C/
W
Maximum Lead Temperature for Soldering
T_L
Purposes, 1/8″ from case for 10 seconds
260
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Negative sign for P−Channel device omitted for clarity.
2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided),
10 sec. max.
http://onsemi.com
3 AMPERES, 20 VOLTS
R_DS(on) = 75 mW
P−Channel
D
G
S
8
1
SO−8
CASE 751
STYLE 13
MARKING
DIAGRAM
8
S3P02
AYWWG
G
1
S3P02
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
N−C
Source
Source
Gate
1 8 ^Drain
2 7 Drain
3 6 Drain
4 5 Drain
ORDERING INFORMATION
Device
Package
Shipping^†
MMSF3P02HDR2
SO−8 2500 Tape & Reel
MMSF3P02HDR2G SO−8 2500 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 7
Publication Order Number:
MMSF3P02HD/D