MMSF2P02E Datasheet, PDF (1/9 Pages) Motorola, Inc – SINGLE TMOS POWER MOSFET 2.5 AMPERES 20 VOLTS

MMSF2P02E
Preferred Device
Power MOSFET
2 Amps, 20 Volts
P−Channel SO−8
These miniature surface mount MOSFETs feature ultra low R_DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a low reverse recovery time. MiniMOSt
devices are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applications
are dc−dc converters, and power management in portable and battery
powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass
storage products such as disk drives and tape drives. The avalanche
energy is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
• Ultra Low R_DS(on) Provides Higher Efficiency and Extends Battery
Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed
• Avalanche Energy Specified
• Mounting Information for SO−8 Package Provided
• I_DSS Specified at Elevated Temperature
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted) (Note 1.)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
− Continuous @ T_A = 25°C (Note 2.)
− Continuous @ T_A = 100°C
− Single Pulse (t_p ≤ 10 μs)
Total Power Dissipation @ T_A = 25°C
(Note 2.)
V_DSS
V_GS
I_D
I_D
I_DM
P_D
20
Vdc
± 20 Vdc
2.5
Adc
1.7
13
Apk
2.5 Watts
Operating and Storage Temperature Range T_J, T_stg − 55 to °C
150
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 20 Vdc, V_GS = 5.0 Vdc,
I_L = 6.0 Apk, L = 12 mH, R_G = 25 Ω)
Thermal Resistance − Junction to Ambient
(Note 2.)
E_AS
R_θJA
216
mJ
50
°C/W
Maximum Lead Temperature for Soldering
T_L
Purposes, 1/8″ from case for 10 seconds
260
°C
1. Negative sign for P−Channel device omitted for clarity.
2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided),
10 sec. max.
http://onsemi.com
2 AMPERES
20 VOLTS
R_DS(on) = 250 mW
P−Channel
D
G
S
MARKING
DIAGRAM
SO−8
8
CASE 751
STYLE 13
1
S4P01
LYWW
L
= Location Code
Y
= Year
WW = Work Week
PIN ASSIGNMENT
N−C
Source
Source
Gate
18
27
36
45
Top View
Drain
Drain
Drain
Drain
ORDERING INFORMATION
Device
Package
Shipping
MMSF2P02ER2
SO−8 2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 6
Publication Order Number:
MMSF2P02E/D