MMSD71RKT1 Datasheet, PDF (1/4 Pages) ON Semiconductor – Switching Diode

MMSD71RKT1
Switching Diode
The switching diode has the following features:
• SOD–123 Surface Mount Package
• High Breakdown Voltage
• Fast Speed Switching Time
• Available in 8 mm Tape and Reel
http://onsemi.com
1
CATHODE
2
ANODE
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board ⁽¹⁾
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate ⁽²⁾ TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage
Temperature Range
Symbol Value
VR
80
IF
200
IFM(surge) 500
Unit
Vdc
mAdc
mAdc
Symbol Max Unit
PD
225
mW
R_qJA
PD
1.8 mW/°C
556 °C/W
300
mW
R_qJA
TJ, Tstg
2.4
417
–55 to
+150
mW/°C
°C/W
°C
2
1
PLASTIC
SOD–123
CASE 425
DEVICE MARKING
6S
ORDERING INFORMATION
Device
Package
Shipping
MMSD71RKT1 SOD–123 3000 / Tape & Reel
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IBR = 100 µAdc)
Reverse Voltage Leakage Current (VR = 80 Vdc)
V(BR)
IR
Forward Voltage (IF = 100 mAdc)
VF
Diode Capacitance (VR = 0.5 Vdc, f = 1.0 MHz)
CD
Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1)
trr
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Min
Max
80
–
–
500
–
1200
–
2.0
–
4.0
Unit
Vdc
nAdc
mVdc
pF
ns
© Semiconductor Components Industries, LLC, 2001
1
October, 2001 – Rev. 1
Publication Order Number:
MMSD71RKT1/D