MMSD301T1 Datasheet, PDF (1/8 Pages) Motorola, Inc – SOD-123 Schottky Barrier Diodes

ON Semiconductort
SOD-123 Schottky
Barrier Diodes
The MMSD301T1, and MMSD701T1 devices are spin–offs of our
popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They
are designed for high–efficiency UHF and VHF detector applications.
Readily available to many other fast switching RF and digital
applications.
• Extremely Low Minority Carrier Lifetime
• Very Low Capacitance
• Low Reverse Leakage
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
MMSD301T1 VR
MMSD701T1
30
Vdc
70
Forward Power Dissipation
TA = 25°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
PF
225
mW
TJ
–55 to +125
°C
Tstg
–55 to +150
°C
MMSD301T1 = XT, MMSD701T1 = XH
MMSD301T1
MMSD701T1
ON Semiconductor Preferred Devices
2
1
CASE 425–04, STYLE 1
SOD–123
1
Cathode
2
Anode
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 µA)
V(BR)R
Volts
MMSD301T1
30
—
—
MMSD701T1
70
—
—
Diode Capacitance
(VR = 0, f = 1.0 MHz, Note 1)
CT
MMSD301T1
MMSD701T1
pF
—
0.9
1.5
—
0.5
1.0
Total Capacitance
(VR = 15 Volts, f = 1.0 MHz)
(VR = 20 Volts, f = 1.0 MHz)
Reverse Leakage
(VR = 25 V)
(VR = 35 V)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mA)
(IF = 1.0 mAdc)
(IF = 10 mA)
CT
MMSD301T1
MMSD701T1
IR
MMSD301T1
MMSD701T1
VF
MMSD301T1
MMSD701T1
pF
—
0.9
1.5
—
0.5
1.0
—
13
200
nAdc
—
9.0
200
nAdc
Vdc
—
0.38
0.45
—
0.52
0.6
—
0.42
0.5
—
0.7
1.0
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
September, 2001 – Rev. 2
Publication Order Number:
MMSD301T1/D