MMSD103T1_10 Datasheet, PDF (1/4 Pages) ON Semiconductor – High Voltage Switching Diode

MMSD103T1
High Voltage Switching
Diode
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Continuous Reverse Voltage
V_R
250
V
Peak Forward Current
I_F
200
mA
Peak Forward Surge Current
I_FM(surge)
625
mA
THERMAL CHARACTERISTICS
Characteristic
Symbol Value
Unit
Forward Power Dissipation, FR−5 Board
P_F
(Note 1) @ T_A = 25°C
Derate above 25°C
400
mW
3.2
mW/°C
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Junction and Storage
Temperature Range
R_qJL
R_qJA
T_J, T_stg
174
492
−55 to +150
°C/W
°C/W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
http://onsemi.com
1
Cathode
2
Anode
2
1
SOD−123
CASE 425
STYLE 1
MARKING DIAGRAM
1
JS M G
G
JS = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
MMSD103T1G SOD−123 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
July, 2010 − Rev. 5
Publication Order Number:
MMSD103T1/D