MMSD103T1_07 Datasheet, PDF (1/3 Pages) ON Semiconductor – High Voltage Switching Diode

MMSD103T1
Preferred Device
High Voltage Switching
Diode
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
V_R
250
I_F
200
I_FM(surge)
625
Vdc
mAdc
mAdc
Characteristic
Symbol Value
Unit
Forward Power Dissipation, FR−5 Board
P_F
(Note 1) @ T_A = 25°C
Derate above 25°C
400
mW
3.2
mW/°C
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Junction and Storage
Temperature Range
R_qJL
R_qJA
T_J, T_stg
174
492
−55 to +150
°C/W
°C/W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
http://onsemi.com
1
Cathode
2
Anode
2
1
SOD−123
CASE 425
STYLE 1
MARKING DIAGRAM
1
JS M G
G
JS = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
MMSD103T1 SOD−123 3000 / Tape & Reel
MMSD103T1G SOD−123 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2007
1
January, 2007 − Rev. 3
Publication Order Number:
MMSD103T1/D