MMSD103T1G_11 Datasheet, PDF (1/4 Pages) ON Semiconductor – High Voltage Switching Diode

MMSD103T1G,
SMMSD103T1G
High Voltage Switching
Diode
Features
 AEC−Q101 Qualified and PPAP Capable
 S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Continuous Reverse Voltage
V_R
250
V
Peak Forward Current
I_F
200
mA
Peak Forward Surge Current
I_FM(surge)
625
mA
THERMAL CHARACTERISTICS
Characteristic
Symbol Value
Unit
Forward Power Dissipation, FR−5 Board
P_F
(Note 1) @ T_A = 25C
Derate above 25C
400
mW
3.2
mW/C
Thermal Resistance,
Junction−to−Case
R_qJL
C/W
174
Thermal Resistance,
Junction−to−Ambient
R_qJA
C/W
492
Junction and Storage
Temperature Range
T_J, T_stg −55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
http://onsemi.com
SOD−123
CASE 425
STYLE 1
1
Cathode
2
Anode
MARKING DIAGRAM
1
JS M G
G
JS = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
MMSD103T1G
SOD−123 3,000 / Tape & Reel
(Pb−Free)
SMMSD103T1G SOD−123 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2011
1
November, 2011 − Rev. 6
Publication Order Number:
MMSD103T1/D