MMSD103T1 Datasheet, PDF (1/4 Pages) ON Semiconductor – High Voltage Switching Diode

MMSD103T1
Preferred Device
High Voltage Switching
Diode
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
VR
IF
IFM(surge)
Value
250
200
625
Unit
Vdc
mAdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Forward Power Dissipation,
FR–5 Board (Note 1.) @ TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Case
Thermal Resistance,
Junction to Ambient
Junction Temperature
Storage Temperature Range
1. FR–5 = 1.0  0.75  0.062 in.
Symbol
Value
Unit
PF
400
mW
3.2
mW/°C
R_θJL
174
°C/W
R_θJA
TJ
Tstg
492
125 Max
–55 to +150
°C/W
°C
°C
http://onsemi.com
1
Cathode
2
Anode
MARKING
DIAGRAM
2
JS
1
CASE 425–04, STYLE 1
SOD–123
JS = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
MMSD103T1 SOD–123 3000 / Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
IR
µAdc
—
1.0
—
100
Reverse Breakdown Voltage
(IBR = 100 µAdc)
V(BR)
250
—
Vdc
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
mV
—
1000
—
1250
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
—
5.0
pF
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 Ω)
trr
—
50
ns
© Semiconductor Components Industries, LLC, 2001
1
August, 2000 – Rev. 0
Publication Order Number:
MMSD103T1/D