MMPQ3906 Datasheet, PDF (1/4 Pages) Central Semiconductor Corp – SURFACE MOUNT PNP SILICON QUAD TRANSISTOR

MMPQ3906
Preferred Device
Quad Amplifier/Switch
Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Power Dissipation @ T_A = 25°C
Derate above 25°C
Power Dissipation @ T_C = 25°C
Derate above 25°C
Power Dissipation @ T_A = 25°C
Derate above 25°C
Power Dissipation @ T_C = 25°C
Derate above 25°C
Operating and Storage
Junction Temperature Range
Symbol
V_CEO
V_CB
V_EB
I_C
P_D
P_D
P_D
P_D
T_J, T_stg
Value
Unit
−40
Vdc
−40
Vdc
−5.0
Vdc
−200
mAdc
Each
Transistor
200
mW
3.2
mW/°C
0.66
Watts
5.3
mW/°C
Four
Transistors
Equal Power
800
mW
6.4
mW/°C
1.92
Watts
15.4
mW/°C
−55 to +150
°C
http://onsemi.com
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
16
1
SO−16
CASE 751B
STYLE 4
MARKING DIAGRAM
MMPQ3906
AWLYWW
MMPQ3906 = Specific Device Code
A
= Assembly Location
WL = Wafer Lot
Y
= Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MMPQ3906
SO−16
48 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 4
Publication Order Number:
MMPQ3906/D