MMPQ3904 Datasheet, PDF (1/4 Pages) Central Semiconductor Corp – SURFACE MOUNT NPN SILICON QUAD TRANSISTOR

ON Semiconductort
Quad Amplifier/Switch
Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
VCEO
VCB
VEB
IC
40
60
6.0
200
Each
Transistor
Four
Transistors
Equal Power
Vdc
Vdc
Vdc
mAdc
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
PD
0.4
3.2
800
mW
6.4
mW/°C
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD
0.66
5.3
Watts
1.92
15.4
mW/°C
Operating and Storage
TJ, Tstg
–55 to +150
°C
Junction Temperature Range
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO 40
—
— Vdc
Collector–Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO 60
—
— Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO 6.0
—
— Vdc
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
ICBO
— — 50 nAdc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
— — 50 nAdc
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
MMPQ3904
ON Semiconductor Preferred Device
16
1
CASE 751B–05, STYLE 4
SO–16
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 2
Publication Order Number:
MMPQ3904/D