MMPQ3725 Datasheet, PDF (1/4 Pages) Motorola, Inc – Quad Core Drier Transistor

MMPQ3725
Quad Core Driver
Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Emitter Voltage
Emitter −Base Voltage
Collector Current —
Continuous
Operating and Storage
Junction Temperature
Range
Total Power Dissipation
@ T_A = 25°C
Derate above 25°C
Power Dissipation
@ T_C = 25°C
Derate above 25°C
Operating and Storage
Junction Temperature
Range
Symbol
V_CEO
V_CES
V_EB
I_C
T_J, T_stg
Value
40
60
5.0
1.0
−55 to +150
Unit
Vdc
Vdc
Vdc
Adc
°C
P_D
P_D
T_J, T_stg
Each
Transistor
Four
Transistors
Equal
Power
W
0.6
1.4
4.8
11.2
mW/°C
W
1.0
2.5
8.0
2.0
mW/°C
−55 to +150
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector −Emitter
Breakdown Voltage⁽¹⁾
(I_C = 10 mAdc, I_B = 0)
Collector −Base
Breakdown Voltage
(I_C = 100 mAdc, V_BE = 0)
Emitter −Base
Breakdown Voltage
(I_E = 10 mAdc, I_C = 0)
Collector Cutoff Current
(V_CB = 40 Vdc, I_E = 0)
V_(BR)CEO
Vdc
40 — —
V_(BR)CES
Vdc
60 — —
V_(BR)EBO
5.0 —
Vdc
—
I_CBO
mAdc
— — 0.5
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
http://onsemi.com
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Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 3
Publication Order Number:
MMPQ3725/D