MMPQ3467 Datasheet, PDF (1/4 Pages) Motorola, Inc – Quad Memory Driver Transistor

MMPQ3467
Quad Memory Driver
Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current —
Continuous
Power Dissipation
@ T_A = 25°C
Derate above 25°C
Power Dissipation
@ T_C = 25°C
Derate above 25°C
Operating and Storage
Junction Temperature
Range
Symbol
V_CEO
V_CB
V_EB
I_C
Value
−40
−40
−5.0
−1.0
Unit
Vdc
Vdc
Vdc
Adc
P_D
P_D
T_J, T_stg
Each
Transistor
Four
Transistors
Equal
Power
W
0.52
1.2
4.2
9.6
mW/°C
W
1.0
2.5
8.0
20
mW/°C
−55 to +150
°C
http://onsemi.com
16
1
CASE 751B−05, STYLE 4
SO−16
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage⁽¹⁾
(I_C = −10 mAdc, I_B = 0)
V_(BR)CEO
Collector −Base Breakdown Voltage
(I_C = −10 mAdc, I_E = 0)
V_(BR)CBO
Emitter −Base Breakdown Voltage
(I_E = −10 mAdc, I_C = 0)
Collector Cutoff Current
(V_CB = −30 Vdc, I_E = 0)
V_(BR)EBO
I_CBO
Emitter Cutoff Current
(V_EB = −3.0 Vdc, I_C = 0)
I_EBO
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
Min
Typ
Max
Unit
−40
—
—
Vdc
−40
—
—
Vdc
−5.0
—
—
Vdc
—
—
−200
nAdc
—
—
−200
nAdc
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 4
Publication Order Number:
MMPQ3467/D