MMPQ2369 Datasheet, PDF (1/4 Pages) ON Semiconductor – Quad Switching Transistor NPN Silicon

MMPQ2369
Quad Switching
Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current —
Continuous
V_CEO
V_CB
V_EB
I_C
15
Vdc
40
Vdc
4.5
Vdc
500
mAdc
Each
Transistor
Four
Transistors
Equal
Power
Total Power Dissipation
P_D
@ T_A = 25°C
0.4
Derate above 25°C
3.2
W
0.72
6.4
mW/°C
Total Power Dissipation
P_D
@ T_C = 25°C
0.66
Derate above 25°C
5.3
W
1.92
15.4
mW/°C
Operating and Storage
T_J, T_stg
−55 to +150
°C
Junction Temperature
Range
ELECTRICAL CHARACTERISTICS
(T_A = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector −Emitter
Breakdown Voltage⁽¹⁾
(I_C = 10 mAdc, I_B = 0)
V_(BR)CEO
15 —
Collector −Base
Breakdown Voltage
(I_C = 10 mAdc, I_E = 0)
V_(BR)CBO
40 —
Emitter −Base
Breakdown Voltage
(I_E = 10 mAdc, I_C = 0)
V_(BR)EBO
4.5 —
Collector Cutoff Current
(V_CB = 20 Vdc, I_E = 0)
I_CBO
——
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
Vdc
—
Vdc
—
Vdc
—
0.4 mAdc
http://onsemi.com
16
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CASE 751B−05, STYLE 4
SO−16
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14
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Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 2
Publication Order Number:
MMPQ2369/D