MMJT350T1G_13 Datasheet, PDF (1/4 Pages) ON Semiconductor – Bipolar Power Transistors

MMJT350T1G
Bipolar Power Transistors
PNP Silicon
Bipolar power transistors are designed for use in line−operated
applications such as low power, line−operated series pass and
switching regulators requiring PNP capability.
Features
• High Collector−Emitter Sustaining Voltage
• Excellent DC Current Gain
• Epoxy Meets UL 94 V−0 @ 0.125 in
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
http://onsemi.com
0.5 AMPERE
POWER TRANSISTOR
PNP SILICON
300 VOLTS, 2.75 WATTS
C 2,4
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
B1 E3
Schematic
4
1
2
3
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
AYW
T350 G
G
A
Y
W
G
T350
= Assembly Location
= Year
= Work Week
= Pb−Free Package
= Device Code
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
MMJT350T1G SOT−223 1,000 / Tape & Reel
(Pb−Free)
SMMJT350T1G SOT−223 1,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
August, 2013 − Rev. 7
Publication Order Number:
MMJT350T1/D