MMJT350T1G Datasheet, PDF (1/4 Pages) ON Semiconductor – Bipolar Power Transistors

MMJT350T1G
Bipolar Power Transistors
PNP Silicon
Bipolar power transistors are designed for use in line−operated
applications such as low power, line−operated series pass and
switching regulators requiring PNP capability.
Features
• High Collector−Emitter Sustaining Voltage −
V_CEO(sus) = 300 Vdc @ I_C
= 1.0 mAdc
• Excellent DC Current Gain −
h_FE = 30 −240 @ I_C
= 50 mAdc
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
0.5 AMPERE
POWER TRANSISTOR
PNP SILICON
300 VOLTS, 2.75 WATTS
C 2,4
B1 E3
Schematic
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
AYW
T350 G
G
© Semiconductor Components Industries, LLC, 2010
September, 2010 − Rev. 5
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Free Package
T350 = Device Code
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
MMJT350T1G
SOT−223 ^{1000 / Tape & Reel}
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
Publication Order Number:
MMJT350T1/D