MMJT350T1 Datasheet, PDF (1/4 Pages) ON Semiconductor – Bipolar Power Transistors

MMJT350T1
Bipolar Power Transistors
PNP Silicon
. . . designed for use in line−operated applications such as low
power, line−operated series pass and switching regulators requiring
PNP capability.
• High Collector−Emitter Sustaining Voltage −
V_CEO(sus) = 300 Vdc @ I_C
= 1.0 mAdc
• Excellent DC Current Gain −
h_FE = 30 −240 @ I_C
= 50 mAdc
• Epoxy Meets UL94, V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
http://onsemi.com
0.5 AMPERE
POWER TRANSISTOR
PNP SILICON
300 VOLTS
2.75 WATTS
C 2,4
© Semiconductor Components Industries, LLC, 2003
October, 2003 − Rev. 1
B1 E3
Schematic
MARKING
DIAGRAM
SOT−223
CASE 318E
Style 1
AYM
T350
T350
A
Y
M
= Specific Device Code
= Assembly Location
= Last Digit of Year
= Month Code
4
C
BCE
1 23
Top View Pinout
ORDERING INFORMATION
Device
Package
Shipping
MMJT350T1
SOT−223
1000 / Tape &
Reel
1
Publication Order Number:
MMJT350T1/D