MMFT960T1 Datasheet, PDF (1/8 Pages) Motorola, Inc – MEDIUM POWER TMOS FET 300 mA 60 VOLTS

MMFT960T1
Preferred Device
Power MOSFET
300 mA, 60 Volts
N–Channel SOT–223
This Power MOSFET is designed for high speed, low loss power
switching applications such as switching regulators, dc–dc converters,
solenoid and relay drivers. The device is housed in the SOT–223
package which is designed for medium power surface mount
applications.
• Silicon Gate for Fast Switching Speeds
• Low Drive Requirement
• The SOT–223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage
Gate–to–Source Voltage – Non–Repetitive
Drain Current
Total Power Dissipation @ TA = 25°C
(Note 1.)
Derate above 25°C
VDS
VGS
ID
PD
60
Volts
±30
Volts
300 mAdc
0.8 Watts
6.4 mW/°C
Operating and Storage Temperature
Range
TJ, Tstg –65 to
°C
150
THERMAL CHARACTERISTICS
Thermal Resistance –
Junction–to–Ambient
R_θJA
156 °C/W
Maximum Temperature for Soldering
Purposes
Time in Solder Bath
TL
260
°C
10
Sec
1. Device mounted on a FR–4 glass epoxy printed circuit board using minimum
recommended footprint.
http://onsemi.com
300 mA
60 VOLTS
RDS(on) = 1.7 W
N–Channel
D
G
S
MARKING
DIAGRAM
1
2
3
4 _{TO–261AA}
CASE 318E
STYLE 3
FT960
LWW
L
= Location Code
WW = Work Week
PIN ASSIGNMENT
4 Drain
© Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 4
123
Gate Drain Source
ORDERING INFORMATION
Device
Package
Shipping
MMFT960T1
SOT–223 1000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
1
Publication Order Number:
MMFT960T1/D