MMFT5P03HD Datasheet, PDF (1/12 Pages) Motorola, Inc – TMOS MEDIUM POWER FET 5.2 AMPERES 30 VOLTS

MMFT5P03HD
Preferred Device
Power MOSFET
5 Amps, 30 Volts
P–Channel SOT–223
This miniature surface mount MOSFET features ultra low RDS(on)
and true logic level performance. It is capable of withstanding high
energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MMFT5P03HD devices are designed for use in low voltage, high
speed switching applications where power efficiency is important.
Typical applications are dc–dc converters, and power management in
portable and battery powered products such as computers, printers,
cellular and cordless phones. They can also be used for low voltage
motor controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the guesswork
in designs where inductive loads are switched and offer additional
safety margin against unexpected voltage transients.
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
• Logic Level Gate Drive – Can Be Driven by Logic ICs
• Miniature SOT–223 Surface Mount Package – Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
http://onsemi.com
5 AMPERES
30 VOLTS
RDS(on) = 100 mΩ
P–Channel
D
G
S
MARKING
DIAGRAM
1
2
3
4 _{TO–261AA}
CASE 318E
STYLE 3
5P03H
LWW
L
= Location Code
WW = Work Week
PIN ASSIGNMENT
4 Drain
© Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 3
123
Gate Drain Source
ORDERING INFORMATION
Device
Package
Shipping
MMFT5P03HDT3 SOT–223 4000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
1
Publication Order Number:
MMFT5P03HD/D