MMFT3055V Datasheet, PDF (1/7 Pages) Motorola, Inc – TMOS POWER FET 1.7 AMPERES 60 VOLTS

MMFT3055V
Power MOSFET
1 Amp, 60 Volts
N−Channel SOT−223
These Power MOSFETs are designed for low voltage, high speed
switching applications in power supplies, converters and power motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
Features
• Avalanche Energy Specified
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Pb−Free Package is Available
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (R_GS = 1.0 MW)
Gate−to−Source Voltage
− Continuous
− Non−repetitive (t_p ≤ 10 ms)
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (t_p ≤ 10 ms)
Total PD @ T_A = 25°C mounted on 1″ sq.
Drain pad on FR−4 bd material
Total PD @ T_A = 25°C mounted on
0.70″ sq. Drain pad on FR−4 bd material
Total PD @ T_A = 25°C mounted on min.
Drain pad on FR−4 bd material
Derate above 25°C
Operating and Storage Temperature Range
V_DSS
60
Vdc
V_DGR
60
Vdc
V_GS
V_GSM
I_D
I_D
I_DM
P_D
T_J, T_stg
± 20 Vdc
± 25 Vpk
1.7
Adc
1.4
6.0
Apk
2.1
W
1.7
0.94
6.3
−55 to
175
mW/°C
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 25 Vdc, V_GS = 10 Vdc, Peak
I_L = 3.4 Apk, L = 10 mH, R_G = 25 W )
Thermal Resistance
− Junction to Ambient on 1″ sq.
Drain padon FR−4 bd material
− Junction to Ambient on 0.70″ sq.
Drain pad on FR−4 bd material
− Junction to Ambient on min.
Drain pad on FR−4 bd material
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 s
E_AS
R_qJA
R_qJA
R_qJA
T_L
mJ
58
°C/W
70
88
159
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 4
http://onsemi.com
1 AMPERE, 60 VOLTS
R_DS(on) = 130 mW
N−Channel
D
G
S
4
1
2
3
TO−261AA
CASE 318E
STYLE 3
MARKING DIAGRAM AND
PIN ASSIGNMENT
4 Drain
1
Gate
AYW
V3055 G
G
2
Drain
3
Source
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Free Package
V3055 = Device Code
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
MMFT3055VT1 SOT−223 1000 Tape & Reel
MMFT3055VT1G SOT−223 1000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MMFT3055V/D