MMFT3055E Datasheet, PDF (1/7 Pages) Motorola, Inc – MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS

MMFT3055E
Power MOSFET
1.7 Amp, 60 Volts
N−Channel TMOS E−FETt SOT−223
This advanced E−FET is a TMOS Medium Power MOSFET
designed to withstand high energy in the avalanche and commutation
modes. This new energy efficient device also offers a drain−to−source
diode with a fast recovery time. Designed for low voltage, high speed
switching applications in power supplies, dc−dc converters and PWM
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients. The device is housed in the SOT−223 package which is
designed for medium power surface mount applications.
Features
• Silicon Gate for Fast Switching Speeds
• Low R_DS(on) — 0.15 Ω max
• The SOT−223 Package can be Soldered Using Wave or Reflow. The
Formed Leads Absorb Thermal Stress During Soldering, Eliminating
the Possibility of Damage to the Die
• Available in 12 mm Tape and Reel
Use MMFT3055ET1 to order the 7 inch/1000 unit reel.
Use MMFT3055ET3 to order the 13 inch/4000 unit reel.
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage− Continuous
Drain Current − Continuous
Drain Current − Single Pulse (t_p ≤ 10 ms)
Total Power Dissipation @ T_A = 25°C
Derate above 25°C (Note 1)
V_DSS
V_GS
I_D
I_DM
P_D
60
± 20
1.7
6.8
0.8
6.3
Vdc
Vdc
Adc
Apk
Watts
mW/°C
Operating and Storage Temperature
Range
T_J, T_stg −65 to
°C
150
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 60 Vdc, V_GS = 10 Vdc, Peak
I_L = 1.7 Apk, L = 0.2 mH, R_G = 25 Ω )
Thermal Resistance
− Junction to Ambient (surface mounted)
E_AS
R_θJA
mJ
168
°C/W
156
Maximum Lead Temperature for Soldering
T_L
Purposes, 1/8″ from case for 10
seconds
260
°C
1. Power rating when mounted on FR−4 glass epoxy printed circuit board
using recommended footprint.
http://onsemi.com
V_DSS
60 V
R_DS(ON) TYP
150 mΩ
I_D MAX
1.7 A
N−Channel
2,4
D
1
G
4
1
2
3
SOT−223
CASE 318E
STYLE 3
S
3
MARKING
DIAGRAM
3055
LWW
L
= Location Code
WW = Work Week
PIN ASSIGNMENT
4 Drain
123
Gate Drain Source
ORDERING INFORMATION
Device
Package
Shipping^†
MMFT3055ET1 SOT−223 1000 Tape & Reel
MMFT3055ET3 SOT−223 4000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 5
Publication Order Number:
MMFT3055E/D