MMFT2N25E Datasheet, PDF (1/6 Pages) Motorola, Inc – TMOS POWER FET 2.0 AMPERES 250 VOLTS

MMFT2N25E
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High Energy Power FET
N−Channel Enhancement−Mode Silicon
Gate
This advanced high voltage MOSFET is designed to withstand high
energy in the avalanche mode and switch efficiently. This new high
energy device also offers a drain−to−source diode with fast recovery
time. Designed for high voltage, high speed switching applications
such as power supplies, PWM motor controls and other inductive
loads, the avalanche energy capability is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
• Avalanche Energy Capability Specified at Elevated Temperature
• Internal Source−to−Drain Diode Designed to Replace External Zener
Transient Suppressor − Absorbs High Energy in the Avalanche Mode
• Source−to−Drain Diode Recovery Time Comparable to Discrete Fast
Recovery Diode
http://onsemi.com
POWER FET
2.0 AMPERES, 250 VOLTS
R_DS(on) = 3.5 W
4
CASE 318E−04, STYLE 3
1
2
TO−261AA
3
2,4
D
1
G
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol
Drain−to−Source Voltage
V_DSS
Drain−to−Gate Voltage, R_GS = 1.0 mW
Gate−to−Source Voltage — Continuous
V_DGR
V_GS
Gate−to−Source Voltage — Single Pulse (tp ≤ 50 mS)
Drain Current — Continuous @ T_C = 25°C
Drain Current — Continuous @ T_C = 100°C
Drain Current — Single Pulse (tp ≤ 10 mS)
V_GSM
I_D
I_D
I_DM
Total Power Dissipation @ T_C = 25°C
P_D
Derate above 25°C
Total P_D @ T_A = 25°C mounted on 1″ Sq. Drain Pad on FR−4 Bd. Material
Total P_D @ T_A = 25°C mounted on 0.7″ Sq. Drain Pad on FR−4 Bd. Material
Total P_D @ T_A = 25°C mounted on min. Drain Pad on FR−4 Bd. Material
Operating and Storage Temperature Range
T_J, T_stg
UNCLAMPED DRAIN−TO−SOURCE AVALANCHE CHARACTERISTICS (T_J < 150°C)
Single Pulse Drain−to−Source Avalanche Energy — Starting T_J = 25°C
E_AS
(V_DD = 80 V, V_GS = 10 V, Peak I_L= 4.0 Apk, L = 3.0 mH, R_G = 25 Ω)
THERMAL CHARACTERISTICS
— Junction−to−Ambient on 1″ Sq. Drain Pad on FR−4 Bd. Material
— Junction−to−Ambient on 0.7″ Sq. Drain Pad on FR−4 Bd. Material
— Junction−to−Ambient on min. Drain Pad on FR−4 Bd. Material
R_θJA
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
T_L
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
S
3
Value
250
250
± 20
± 40
2.0
0.6
7.0
0.77
6.2
1.0
1.2
0.8
−55 to 150
26
90
103
162
260
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Apk
Watts
mW/°C
Watts
°C
mJ
°C/W
°C
© Semiconductor Components Industries, LLC, 2013
1
May, 2013 − Rev. 2
Publication Order Number:
MMFT2N25E/D