MMFT2N02EL Datasheet, PDF (1/10 Pages) Motorola, Inc – MEDIUM POWER LOGIC LEVEL TMOS FET 1.6 AMP 20 VOLTS

MMFT2N02EL
Preferred Device
Power MOSFET
2 Amps, 20 Volts
N−Channel SOT−223
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. This device is also designed with
a low threshold voltage so it is fully enhanced with 5 Volts. This new
energy efficient device also offers a drain−to−source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, dc−dc converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients. The device is housed in the SOT−223 package which is
designed for medium power surface mount applications.
• Silicon Gate for Fast Switching Speeds
• Low Drive Requirement to Interface Power Loads to Logic Level
ICs, V_GS(th) = 2 Volts Max
• The SOT−223 Package can be Soldered Using Wave or Reflow. The
Formed Leads Absorb Thermal Stress During Soldering, Eliminating
the Possibility of Damage to the Die
MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current − Continuous
Drain Current − Pulsed
Total Power Dissipation @ T_A = 25°C
Derate above 25°C
V_DS
20
Vdc
V_GS
± 15
I_D
1.6
Adc
I_DM
6.4
P_D
0.8 Watts
(Note 1.) 6.4 mW/°C
Operating and Storage Temperature
Range
T_J, T_stg −65 to
°C
150
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 10 V, V_GS = 5 V, Peak
I_L= 2 A, L = 0.2 mH, R_G = 25 Ω)
THERMAL CHARACTERISTICS
Thermal Resistance −
Junction−to−Ambient (surface mounted)
E_AS
R_θJA
66
mJ
156
°C/W
Maximum Temperature for Soldering
Purposes,
Time in Solder Bath
260
°C
T_L
10
Sec
1. Power rating when mounted on FR−4 glass epoxy printed circuit board using
recommended footprint.
http://onsemi.com
2 AMPERES
20 VOLTS
R_DS(on) = 150 mW
N−Channel
D
G
S
MARKING
DIAGRAM
1
2
3
4 _{TO−261AA}
CASE 318E
STYLE 3
2N02L
LWW
L
= Location Code
WW = Work Week
PIN ASSIGNMENT
4 Drain
123
Gate Drain Source
ORDERING INFORMATION
Device
Package
Shipping
MMFT2N02ELT1 SOT−223 1000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 5
Publication Order Number:
MMFT2N02EL/D