MMFT2955E Datasheet, PDF (1/6 Pages) Motorola, Inc – TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS

MMFT2955E
Preferred Device
Power MOSFET
1 Amp, 60 Volts
P−Channel SOT−223
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. This new energy efficient device
also offers a drain−to−source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power
supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients. The device is
housed in the SOT−223 package which is designed for medium power
surface mount applications.
Features
• Silicon Gate for Fast Switching Speeds
• The SOT−223 Package can be Soldered Using Wave or Reflow
• The Formed Leads Absorb Thermal Stress During Soldering,
Eliminating the Possibility of Damage to the Die
• Pb−Free Package is Available
MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current − Continuous
Drain Current − Pulsed
Total Power Dissipation @ T_A = 25°C
Derate above 25°C
V_DS
60
Vdc
V_GS
±15
I_D
1.2
Adc
I_DM
4.8
P_D
0.8
W
(Note 1)
6.4
mW/°C
Operating and Storage Temperature Range T_J, T_stg −65 to 150 °C
Single Pulse Drain−to−Source Avalanche
E_AS
108
mJ
Energy − Starting T_J = 25°C
(V_DD = 25 V, V_GS = 10 V, Peak
I_L= 1.2 A, L = 0.2 mH, R_G = 25 W)
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Ambient R_qJA
(surface mounted)
156
°C/W
Maximum Temperature for Soldering
Purposes,
Time in Solder Bath
T_L
260
°C
10
S
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Power rating when mounted on FR−4 glass epoxy printed circuit board using
recommended footprint.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 7
http://onsemi.com
1 AMPERE, 60 VOLTS
R_DS(on) = 300 mW
P−Channel
D
G
S
4
1
2
3
TO−261AA
CASE 318E
STYLE 3
MARKING DIAGRAM AND
PIN ASSIGNMENT
4 Drain
AYW
2955E G
G
1 23
Gate Drain Source
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Free Package
2955E = Device Code
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
MMFT2955ET1
MMFT2955ET1G
SOT−223
SOT−223
(Pb−Free)
1000 Tape & Reel
1000 Tape & Reel
MMFT2955ET3 SOT−223 4000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MMFT2955E/D