MMFT107T1 Datasheet, PDF (1/8 Pages) Motorola, Inc – MEDIUM POWER TMOS FET 250 mA, 200 VOLTS

MMFT107T1
Preferred Device
Power MOSFET
250 mA, 200 Volts
N–Channel SOT–223
This Power MOSFET is designed for high speed, low loss power
switching applications such as switching regulators, dc–dc converters,
solenoid and relay drivers. The device is housed in the SOT–223
package which is designed for medium power surface mount
applications.
• Silicon Gate for Fast Switching Speeds
• Low Drive Requirement
• The SOT–223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage
Gate–to–Source Voltage – Non–Repetitive
Drain Current
Total Power Dissipation @ TA = 25°C
(Note 1.)
Derate above 25°C
VDSS
VGS
ID
PD
200
Volts
±20
Volts
250 mAdc
0.8 Watts
6.4 mW/°C
Operating and Storage Temperature
Range
TJ, Tstg –65 to
°C
150
THERMAL CHARACTERISTICS
Thermal Resistance –
Junction–to–Ambient
R_θJA
156 °C/W
Maximum Temperature for Soldering
Purposes
Time in Solder Bath
TL
260
°C
10
Sec
1. Device mounted on FR–4 glass epoxy printed circuit using minimum
recommended footprint.
http://onsemi.com
250 mA
200 VOLTS
RDS(on) = 14 W
N–Channel
D
G
S
MARKING
DIAGRAM
1
2
3
4 _{TO–261AA}
CASE 318E
STYLE 3
FT107
LWW
L
= Location Code
WW = Work Week
PIN ASSIGNMENT
4 Drain
© Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 4
123
Gate Drain Source
ORDERING INFORMATION
Device
Package
Shipping
MMFT107T1
MMFT107T3
SOT–223 1000 Tape & Reel
SOT–223 4000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
1
Publication Order Number:
MMFT107T1/D