MMDL770T1G Datasheet, PDF (1/3 Pages) ON Semiconductor – Schottky Barrier Diode

MMDL770T1G
Schottky Barrier Diode
Schottky barrier diodes are designed primarily for high−efficiency
UHF and VHF detector applications. Readily available to many other
fast switching RF and digital applications.
Features
• Extremely Low Minority Carrier Lifetime
• Very Low Capacitance − 1.0 pF @ 20 V
• Low Reverse Leakage − 200 nA (max)
• High Reverse Voltage − 70 V (min)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
THERMAL CHARACTERISTICS
V_R
70
Vdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
(Note 1) @T_A = 25°C
Derate above 25°C
P_D
200
mW
1.57
mW/°C
Thermal Resistance, Junction−to−Ambient R_qJA
635
°C/W
Junction and Storage Temperature Range T_J, T_stg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 Minimum Pad
http://onsemi.com
1.0 pF SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
2
1
SOD−323
CASE 477
STYLE 1
MARKING DIAGRAM
5H M G
G
5H = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
MMDL770T1G SOD−323 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
June, 2011 − Rev. 3
Publication Order Number:
MMDL770T1/D