MMDF2P01HD Datasheet, PDF (1/12 Pages) Motorola, Inc – DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS

MMDF2P01HD
Preferred Device
Power MOSFET
2 Amps, 12 Volts
P−Channel SO−8, Dual
These miniature surface mount MOSFETs feature ultra low R_DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a very low reverse recovery time.
MiniMOSt devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc−dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives.
• Ultra Low R_DS(on) Provides Higher Efficiency and Extends Battery
Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I_DSS Specified at Elevated Temperature
• Mounting Information for SO−8 Package Provided
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted) (Note 1.)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (R_GS = 1.0 MΩ)
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ T_A = 25°C
Drain Current − Continuous @ T_A = 100°C
Drain Current − Single Pulse (t_p ≤ 10 µs)
Total Power Dissipation @ T_A = 25°C
(Note 2.)
V_DSS
V_DGR
V_GS
I_D
I_D
I_DM
P_D
12
12
± 8.0
3.4
2.1
17
2.0
Vdc
Vdc
Vdc
Adc
Apk
Watts
Operating and Storage Temperature Range
− 55 to 150
°C
Thermal Resistance − Junction to Ambient
(Note 2.)
R_θJA
62.5 °C/W
Maximum Lead Temperature for Soldering
T_L
Purposes, 1/8″ from case for 10 seconds
260
°C
1. Negative sign for P−Channel device omitted for clarity.
2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with
one die operating, 10 sec. max.
http://onsemi.com
2 AMPERES
12 VOLTS
R_DS(on) = 180 mW
P−Channel
D
G
S
MARKING
DIAGRAM
8
SO−8, Dual
CASE 751
STYLE 11
D2P01
LYWW
1
D2P01
L
Y
WW
= Device Code
= Location Code
= Year
= Work Week
PIN ASSIGNMENT
Source−1
Gate−1
Source−2
Gate−2
18
27
36
45
Top View
Drain−1
Drain−1
Drain−2
Drain−2
ORDERING INFORMATION
Device
Package
Shipping
MMDF2P01HDR2 SO−8 2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
September, 2004 − Rev. XXX
Publication Order Number:
MMDF2P01HD/D