MMDF2C02E Datasheet, PDF (1/10 Pages) ON Semiconductor – Power MOSFET

MMDF2C02E
Power MOSFET
2.5 Amps, 25 Volts
Complementary SO−8, Dual
These miniature surface mount MOSFETs feature ultra low R_DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a low reverse recovery time. MiniMOSt
devices are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applications
are dc−dc converters, and power management in portable and battery
powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass
storage products such as disk drives and tape drives. The avalanche
energy is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
• Ultra Low R_DS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, with Soft Recovery
• Avalanche Energy Specified
• Mounting Information for SO−8 Package Provided
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted) (Note 1)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current
− Continuous N−Channel
P−Channel
− Pulsed
N−Channel
P−Channel
Operating and Storage Temperature Range
Total Power Dissipation @ T_A= 25°C (Note 2)
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 20 V, V_GS = 10 V, Peak I_L = 9.0 A,
L = 6.0 mH, R_G = 25 Ω) N−Channel
(V_DD = 20 V, V_GS = 10 V, Peak I_L = 7.0 A,
L = 10 mH, R_G = 25 Ω)
P−Channel
Thermal Resistance − Junction to Ambient
(Note 2)
V_DSS
V_GS
I_D
I_DM
T_J and
T_stg
P_D
E_AS
25
± 20
3.6
2.5
18
13
− 55
to 150
2.0
Vdc
Vdc
Adc
°C
Watts
mJ
R_θJA
245
245
62.5 °C/W
Maximum Lead Temperature for Soldering,
0.0625″ from case. Time in Solder Bath is
10 seconds.
T_L
260
°C
1. Negative signs for P−Channel device omitted for clarity.
2. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with
one die operating, 10 sec. max.
http://onsemi.com
2.5 AMPERES, 25 VOLTS
R_DS(on) = 100 mW (N−Channel)
R_DS(on) = 250 mW (P−Channel)
N−Channel
D
P−Channel
D
G
G
S
S
8
1
SO−8
CASE 751
STYLE 14
MARKING
DIAGRAM
8
F2C02
ALYW
1
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
PIN ASSIGNMENT
N−Source
N−Gate
P−Source
P−Gate
18
27
36
45
Top View
N−Drain
N−Drain
P−Drain
P−Drain
ORDERING INFORMATION
Device
Package
Shipping^†
MMDF2C02ER2
SO−8 2500 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 8
Publication Order Number:
MMDF2C02E/D