MMBV809LT1 Datasheet, PDF (1/4 Pages) Leshan Radio Company – Silicon Tuning Diode

ON Semiconductort
Silicon Tuning Diode
This device is designed for 900 MHz frequency control and tuning
applications. It provides solid–state reliability in replacement of
mechanical tuning methods.
• Controlled and Uniform Tuning Ratio
• Available in Surface Mount Package
• Available in 8 mm Tape and Reel
MMBV809LT1
ON Semiconductor Preferred Device
4.5–6.1 pF
VOLTAGE VARIABLE
CAPACITANCE DIODE
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Total Power Dissipation(1) @ TA = 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
1. FR5 Board 1.0 x 0.75 x 0.62 in.
DEVICE MARKING
MMBV809LT1 = 5K
Symbol
VR
IF
PD
TJ
Tstg
Value
20
20
225
1.8
+125
–55 to +125
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
3
1
2
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
1
ANODE
3
CATHODE
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic – All Types
Reverse Breakdown Voltage
(IR = 10 µAdc)
Reverse Voltage Leakage Current
(VR = 15 Vdc)
Symbol Min
V(BR)R
20
IR
—
Typ
Max
Unit
—
—
Vdc
—
50
nAdc
Ct, Diode Capacitance
VR = 2.0 Vdc, f = 1.0 MHz
pF
Device
Min
Typ
Max
MMBV809LT1
4.5
5.3
6.1
2. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 Vdc.
Q, Figure of Merit
VR = 3.0 Vdc
f = 500 MHz
Typ
75
CR, Capacitance Ratio
C2/C8
f = 1.0 MHz(2)
Min
Max
1.8
2.6
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 3
Publication Order Number:
MMBV809LT1/D