MMBV609LT1 Datasheet, PDF (1/4 Pages) Leshan Radio Company – Silicon Tuning Diode

ON Semiconductort
Silicon Tuning Diode
This device is designed for FM tuning, general frequency control
and tuning, or any top–of–the–line application requiring
back–to–back diode configuration for minimum signal distortion and
detuning. This device is supplied in the SOT–23 plastic package for
high volume, pick and place assembly requirements.
• High Figure of Merit  Q = 450 (Typ) @ VR = 3.0 Vdc, f = 50 MHz
• Guaranteed Capacitance Range
• Dual Diodes – Save Space and Reduce Cost
• Surface Mount Package
• Available in 8 mm Tape and Reel
• Monolithic Chip Provides Improved Matching
• Hyper Abrupt Junction Process Provides High Tuning Ratio
MAXIMUM RATINGS (Each Diode)
Rating
Reverse Voltage
Forward Current
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
MMBV609LT1 = 5L
Symbol
VR
IF
PD
TJ
Tstg
Value
20
100
225
1.8
+125
–55 to +125
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
MMBV609LT1
ON Semiconductor Preferred Device
DUAL
VOLTAGE VARIABLE
CAPACITANCE DIODE
3
1
2
CASE 318–08, STYLE 9
SOT–23 (TO–236AB)
12 3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 µAdc)
Reverse Voltage Leakage Current
(VR = 15 Vdc)
Diode Capacitance
(VR = 3.0 Vdc, f = 1.0 MHz)
Capacitance Ratio C3/C8
(f = 1.0 MHz)
V(BR)R
20
—
—
Vdc
IR
—
—
10
nAdc
CT
26
—
32
pF
CR
1.8
—
2.4
—
Figure of Merit
(VR = 3.0 Vdc, f = 50 MHz)
Q
250
450
—
—
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 2
Publication Order Number:
MMBV609LT1/D