MMBV432LT1 Datasheet, PDF (1/4 Pages) Leshan Radio Company – Silicon Tuning Diode

ON Semiconductort
Silicon Tuning Diode
This device is designed for FM tuning, general frequency control
and tuning, or any top–of–the–line application requiring
back–to–back diode configuration for minimum signal distortion and
detuning. This device is supplied in the SOT–23 plastic package for
high volume, pick and place assembly requirements.
• High Figure of Merit  Q = 150 (Typ) @ V_R = 2.0 Vdc, f = 100 MHz
• Guaranteed Capacitance Range
• Dual Diodes – Save Space and Reduce Cost
• Surface Mount Package
• Available in 8 mm Tape and Reel
• Monolithic Chip Provides Improved Matching – Guaranteed ± 1.0%
(Max)
Over Specified Tuning Range
MMBV432LT1
ON Semiconductor Preferred Device
DUAL
VOLTAGE VARIABLE
CAPACITANCE DIODE
3
1
2
CASE 318–08, STYLE 9
SOT–23 (TO–236AB)
MAXIMUM RATINGS (Each Diode)
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Current
Total Power Dissipation @ T_A = 25°C
Derate above 25°C
V_R
14
Vdc
I_F
200
mAdc
P_D
225
mW
1.8
mW/°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
T_J
+125
°C
T_stg
–55 to +125
°C
MMBV432LT1 = M4B
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Reverse Breakdown Voltage
(I_R = 10 µAdc)
Reverse Voltage Leakage Current
(V_R = 9.0 Vdc)
Diode Capacitance
(V_R = 2.0 Vdc, f = 1.0 MHz)
Capacitance Ratio C2/C8
(f = 1.0 MHz)
V_(BR)R
I_R
C_T
C_R
Figure of Merit
Q
(V_R = 2.0 Vdc, f = 100 MHz)
1
2
3
Min
Typ
Max
Unit
14
—
—
Vdc
—
—
100
nAdc
43
—
48.1
pF
1.5
—
2.0
—
100
150
—
—
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 2
Publication Order Number:
MMBV432LT1/D