MMBV3700LT1 Datasheet, PDF (1/8 Pages) Leshan Radio Company – Silicon Pin Diode

ON Semiconductort
High Voltage Silicon Pin Diodes
These devices are designed primarily for VHF band switching
applications but are also suitable for use in general–purpose switching
circuits. They are supplied in a cost–effective plastic package for
economical, high–volume consumer and industrial requirements.
They are also available in surface mount.
• Long Reverse Recovery Time trr = 300 ns (Typ)
• Rugged PIN Structure Coupled with Wirebond Construction for
Optimum Reliability
• Low Series Resistance @ 100 MHz – RS = 0.7 Ohms (Typ) @
IF = 10 mAdc
• Reverse Breakdown Voltage = 200 V (Min)
MMBV3700LT1
MPN3700
3
1
2
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
3
Cathode
SOT–23
1
Anode
MAXIMUM RATINGS
Rating
Reverse Voltage
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
Symbol
VR
PD
TJ
Tstg
DEVICE MARKING
MMBV3700LT1 = 4R
MPN3700 MMBV3700LT1 Unit
200
Vdc
280
200
2.8
2.0
+125
–55 to +150
mW
mW/°C
°C
°C
1
2
CASE 182–06, STYLE 1
TO–92 (TO–226AC)
2
Cathode
TO–92
1
Anode
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 µAdc)
Diode Capacitance
(VR = 20 Vdc, f = 1.0 MHz)
V(BR)R
200
–
–
Vdc
CT
–
–
1.0
pF
Series Resistance (Figure 5)
(IF = 10 mAdc)
Reverse Leakage Current
(VR = 150 Vdc)
RS
–
0.7
1.0
Ω
IR
–
–
0.1
µAdc
Reverse Recovery Time
(IF = IR = 10 mAdc)
trr
–
300
–
ns
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 2
Publication Order Number:
MMBV3700LT1D