MMBV105GLT1 Datasheet, PDF (1/4 Pages) Leshan Radio Company – Silicon Tuning Diode

ON Semiconductort
Silicon Tuning Diode
This device is designed in the Surface Mount package for general
frequency control and tuning applications. It provides solid–state
reliability in replacement of mechanical tuning methods.
• Controlled and Uniform Tuning Ratio
MAXIMUM RATINGS
Rating
Symbol
Value
Reverse Voltage
Forward Current
Device Dissipation @ T_A = 25°C
Derate above 25°C
V_R
30
I_F
200
P_D
225
1.8
Junction Temperature
Storage Temperature Range
DEVICE MARKING
T_J
+125
T_stg
–55 to +150
MMBV105GLT1 = M4E
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
MMBV105GLT1
ON Semiconductor Preferred Device
30 VOLT
VOLTAGE VARIABLE
CAPACITANCE DIODE
3
1
2
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I_R = 10 µAdc)
Reverse Voltage Leakage Current
(V_R = 28 Vdc)
Device Type
MMBV105GLT1
C_T
V_R = 25 Vdc, f = 1.0 MHz
pF
Min
Max
1.5
2.8
3
Cathode
1
Anode
Symbol
Min
V_(BR)R
30
I_R
—
Max
Unit
—
Vdc
50
nAdc
Q
V_R = 3.0 Vdc
f = 50 MHz
Typ
250
C_R
C₃/C₂₅
f = 1.0 MHz
Min
Max
4.0
6.5
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 2
Publication Order Number:
MMBV105GLT1/D