MMBTH10LT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – VHF/UHF Transistor

MMBTH10LT1,
MMBTH10−4LT1
Preferred Devices
VHF/UHF Transistor
NPN Silicon
• Device Marking: 3EM
Device Marking:
Features
• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
Characteristic
Symbol
Total Device Dissipation
PD
FR−5 Board (Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient (Note 1)
R_θJA
Total Device Dissipation
PD
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient (Note 2)
R_θJA
Junction and Storage
Temperature Range
TJ, Tstg
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Value
Unit
25
Vdc
30
Vdc
3.0
Vdc
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
°C/W
−55 to
°C
+150
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
CASE 318
SOT−23
STYLE 6
ORDERING INFORMATION
Device
Package
Shipping^†
MMBTH10LT1
MMBTH10LT1G
MMBTH10−4LT1
SOT−23
SOT−23
(Pb−Free)
SOT−23
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2003
1
December, 2003 − Rev. 2
Publication Order Number:
MMBTH10LT1/D