MMBTA92LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – High Voltage Transistors

MMBTA92LT1
Preferred Device
High Voltage Transistor
PNP Silicon
Features
• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
MAXIMUM RATINGS
Rating
Symbol MMBTA92 Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
V_CEO
V_CBO
V_EBO
I_C
−300
−300
−5.0
−500
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
P_D
(Note 1) T_A = 25°C
Derate above 25°C
225
mW
1.8
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
556
°C/W
Total Device Dissipation
P_D
Alumina Substrate, (Note 2) T_A = 25°C
Derate above 25°C
300
mW
2.4
mW/°C
Thermal Resistance, Junction−to−Ambi-
ent
R_qJA
417
°C/W
Junction and Storage Temperature
T_J, T_stg −55 to +150 °C
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236AF)
CASE 318
Style 6
MARKING
DIAGRAM
2D
2D
= Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping^†
MMBTA92LT1
SOT−23 3000 / Tape & Reel
MMBTA92LT1G SOT−23 3000 / Tape & Reel
MMBTA92LT3
SOT−23 10000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2003
1
November, 2003 − Rev. 4
Publication Order Number:
MMBTA92LT1/D