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MMBTA63LT1G_09 Datasheet, PDF (1/4 Pages) ON Semiconductor – Darlington Transistors | |||
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MMBTA63LT1G,
MMBTA64LT1G
Darlington Transistors
PNP Silicon
Features
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector âEmitter Voltage
Collector âBase Voltage
Emitter âBase Voltage
Collector Current â Continuous
THERMAL CHARACTERISTICS
VCES
VCBO
VEBO
IC
â30
â30
â10
â500
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation FRâ5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Symbol
PD
Max
225
1.8
Unit
mW
mW/°C
Thermal Resistance, JunctionâtoâAmbient
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
RqJA
PD
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, JunctionâtoâAmbient RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg â55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FRâ5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
http://onsemi.com
BASE
1
COLLECTOR 3
EMITTER 2
3
1
2
SOTâ23 (TOâ236)
CASE 318
STYLE 6
MARKING DIAGRAM
2x M G
G
1
2x = Device Code
x = U for MMBTA63LT1
x = V for MMBTA64LT1
M = Date Code*
G = PbâFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shippingâ
MMBTA63LT1G SOTâ23 3,000 / Tape & Reel
(PbâFree)
MMBTA64LT1G SOTâ23 3,000 / Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 â Rev. 4
Publication Order Number:
MMBTA63LT1/D
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