MMBTA56WT1G Datasheet, PDF (1/5 Pages) ON Semiconductor – Driver Transistor

MMBTA56WT1G
Driver Transistor
PNP Silicon
Features
 Moisture Sensitivity Level: 1
 ESD Rating: Human Body Model - 4 kV
Machine Model - 400 V
 These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector -- Emitter Voltage
Collector -- Base Voltage
Emitter -- Base Voltage
Collector Current -- Continuous
THERMAL CHARACTERISTICS
Symbol
V_CEO
V_CBO
V_EBO
I_C
Value
--80
--80
--4.0
--500
Unit
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR--5 Board
T_A = 25C
P_D
150
mW
Thermal Resistance, Junction to Ambient
R_θJA
833
C/W
Junction and Storage Temperature
T_J, T_stg -- 55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SC- 70 (SOT- 323)
CASE 419
STYLE 3
MARKING DIAGRAM
FM M G
G
1
FM = Device Code
M = Date Code*
G = Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
MMBTA56WT1G
SC--70 3000/Tape & Reel
(Pb--Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2010
1
October, 2010 - Rev. 2
Publication Order Number:
MMBTA56WT1/D