MMBTA42L_16 Datasheet, PDF (1/5 Pages) ON Semiconductor – High Voltage Transistors

MMBTA42L, SMMBTA42L,
MMBTA43L
High Voltage Transistors
NPN Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Characteristic
Symbol Value
Unit
Collector −Emitter Voltage
V_CEO
Vdc
MMBTA42, SMMBTA42
300
MMBTA43
200
Collector −Base Voltage
V_CBO
Vdc
MMBTA42, SMMBTA42
300
MMBTA43
200
Emitter −Base Voltage
V_EBO
Vdc
MMBTA42, SMMBTA42
6.0
MMBTA43
6.0
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
I_C
500
mAdc
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
(Note 1) T_A = 25°C
Derate above 25°C
P_D
225
mW
1.8
mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate (Note 2) T_A = 25°C
Derate above 25°C
R_qJA
P_D
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, Junction−to−Ambient R_qJA
417
°C/W
Junction and Storage Temperature
T_J, T_stg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
www.onsemi.com
1
BASE
COLLECTOR
3
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAMS
1D M G
G
1
M1E M G
G
1
1D = MMBTA42LT, SMMBTA42L
M1E = MMBTA43LT
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 1994
1
October, 2016 − Rev. 13
Publication Order Number:
MMBTA42LT1/D