MMBTA42L Datasheet, PDF (1/6 Pages) ON Semiconductor – High Voltage Transistors

MMBTA42L, SMMBTA42L,
MMBTA43L
High Voltage Transistors
NPN Silicon
Features
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Characteristic
Symbol Value
Unit
Collector −Emitter Voltage
V_CEO
Vdc
MMBTA42, SMMBTA42
300
MMBTA43
200
Collector −Base Voltage
V_CBO
Vdc
MMBTA42, SMMBTA42
300
MMBTA43
200
Emitter−Base Voltage
V_EBO
Vdc
MMBTA42, SMMBTA42
6.0
MMBTA43
6.0
Collector Current − Continuous
THERMAL CHARACTERISTICS
I_C
500
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
(Note 1) T_A = 25°C
Derate above 25°C
P_D
225
mW
1.8
mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate (Note 2) T_A = 25°C
Derate above 25°C
R_qJA
P_D
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, Junction−to−Ambient R_qJA
417
°C/W
Junction and Storage Temperature
T_J, T_stg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
http://onsemi.com
1
BASE
COLLECTOR
3
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAMS
1D M G
G
1
M1E M G
G
1
1D = MMBTA42LT, SMMBTA42L
M1E = MMBTA43LT
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
July, 2012 − Rev. 12
Publication Order Number:
MMBTA42LT1/D