MMBTA20LT1 Datasheet, PDF (1/8 Pages) Motorola, Inc – General Purpose Amplifier

ON Semiconductort
General Purpose Amplifier
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
V_CEO
40
V_EBO
4.0
I_C
100
Characteristic
Symbol
Max
Total Device Dissipation FR–5 Board⁽¹⁾
P_D
225
T_A = 25°C
Derate above 25°C
1.8
Thermal Resistance Junction to Ambient
R_qJA
556
Total Device Dissipation
Alumina Substrate,⁽²⁾ T_A = 25°C
Derate above 25°C
P_D
300
2.4
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R_qJA
T_J, T_stg
417
–55 to +150
MMBTA20LT1 = 1C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I_C = 1.0 mAdc, I_B = 0)
Emitter–Base Breakdown Voltage
(I_E = 100 mAdc, I_C = 0)
Collector Cutoff Current
(V_CB = 30 Vdc, I_E = 0)
1. FR–5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
MMBTA20LT1
Unit
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
COLLECTOR
3
1
BASE
2
EMITTER
Symbol
Min
Max
Unit
V_(BR)CEO
40
V_(BR)EBO
4.0
I_CBO
—
—
Vdc
—
Vdc
100
nAdc
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I_C = 5.0 mAdc, V_CE = 10 Vdc)
h_FE
40
400
—
Collector–Emitter Saturation Voltage
(I_C = 10 mAdc, I_B = 1.0 mAdc)
V_CE(sat)
—
0.25
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I_C = 5.0 mAdc, V_CE = 10 Vdc, f = 100 MHz)
f_T
125
—
MHz
Output Capacitance
(V_CB = 10 Vdc, I_E = 0, f = 1.0 MHz)
C_obo
—
4.0
pF
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 1
Publication Order Number:
MMBTA20LT1/D