|
MMBTA13LT1 Datasheet, PDF (1/8 Pages) Motorola, Inc – Darlington Amplifier Transistors | |||
|
ON Semiconductort
Darlington Amplifier
Transistors
NPN Silicon
MMBTA13LT1
MMBTA14LT1
MMBTA14LT1 is a Preferred Device
MAXIMUM RATINGS
Rating
CollectorâEmitter Voltage
CollectorâBase Voltage
EmitterâBase Voltage
Collector Current â Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FRâ5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBTA13LT1 = 1M; MMBTA14LT1 = 1N
Symbol
VCES
VCBO
VEBO
IC
Value
30
30
10
300
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
â55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
1. FRâ5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
3
1
2
CASE 318â08, STYLE 6
SOTâ23 (TOâ236AB)
COLLECTOR 3
BASE
1
EMITTER 2
Symbol
Min
Max
Unit
V(BR)CES
30
ICBO
â
IEBO
â
â
Vdc
100
nAdc
100
nAdc
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 â Rev. 1
Publication Order Number:
MMBTA13LT1/D
|
▷ |